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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 20 9 5 27 100 60 +150 -40 +150 50 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=5mA VGE=15V IC=5A VGE=0V VCE=10V f=1MHz VCC=600V IC=5A VGE=15V RG=330 VCC=600V IC=5A VGE=+15V RG=33 IF=5A VGE=0V IF=5A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.5 Units mA A V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 3.0 350 5.5 650 150 40 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 1.25 2.08 Units C/W Collector Current vs. Collector-Emitter Voltage 12 T j= 2 5 C 12 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 10 V GE = 2 0 V 1 5 V 1 2 V V GE = 2 0 V 1 5 V 1 2 V 10 [A] 8 10V 6 [A] 8 10V C Collector Current : I Collector Current : I C 6 4 4 2 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 2 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 10A 5A 2.5A 4 IC = 10A 5A 2.5A 2 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 3 3 , V GE = 1 5 V , T j= 2 5 C Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 3 3 , V GE= 1 5 V , T j= 1 2 5 C 1000 1000 t off tf t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] tf on t on 100 Switching Time : t Switching Time : t on t on 100 tr tr 10 0 2 4 6 8 10 12 0 2 4 6 8 10 12 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =600V, I C =5A, V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =600V, I C =5A, V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 1000 t off tf t off tf t on on Switching Time : t Switching Time : t on 100 tr t on tr 100 100 Gate Resistance : R G [ ] 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 1000 Dynamic Input Characteristics T j= 2 5 C 25 VCC= 400V 600V [V] , C res , C ies [pF] 1000 C ies CE Collector-Emitter Voltage : V 600 15 oes 100 C oes 400 10 10 C res 200 5 1 0 5 10 15 20 25 30 35 0 0 20 40 60 Gate Charge : QG 80 100 [nQ] 0 120 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 150 / dt= 1 0 0 A / s e c 8 / dt = 1 0 0 A / s e c 125C [nsec] [A] 125C 6 rr 100 Reverse Recovery Time : t Reverse Recovery Current : I rr 25C 25C 4 50 2 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V Capacitance : C GE [V] 800 800V 20 Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 C , R G > 3 3 12 120 Typical Short Circuit Capability V CC = 8 0 0 V , R G = 3 3 , T j= 1 2 5 C 60 t SC I SC 80 40 10 100 50 [A] [A] C Short Circuit Current : I 6 60 30 4 40 20 2 20 10 0 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 6 T j= 1 2 5 C 2 5 C 200 I F = 5 A , T j= 1 2 5 C -di / dt 20 [nsec] 5 150 I rr 15 [A] 3 100 10 2 50 t rr 5 1 0 0,0 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 0 10 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I 4 Reverse Recovery Time : t Forward Current : I F rr rr [A] Short Circuit Time : t Collector Current : I SC 8 SC [s] Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
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